Open Access

Table 1.

A standard high density RF-DC plasma nitriding condition.

Process Parameters
Pre-sputtering DC (500 V)
Nitrogen (75 Pa) at 693 K for 1.8 ks
Nitriding RF (250 V), DC (300 V)
Nitrogen (100 mL/min)
Hydrogen (20 mL/min)
75 Pa at 693 K for 14.4 ks

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