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Table 3
Summary of applications and methods for thin-film deposition processes [24].
| Criterion for deposition process | Deposition processes | ||||
|---|---|---|---|---|---|
| PVD | CVD | Thermal spray | |||
| E-beam evaporation | RF Sputtering | Cathodic arc | PECVD | APS/SPPS | |
| Mechanism of production of depositiong species | Thermal energy | Momentum transfer | Thermal energy | Chemical reaction | Flames or plasma |
| Deposition rate | Can be very high (up to 750 000 Å/min) | Low | Can be very high | Moderate (200–2500 Å/min) | Very high |
| Deposition species | Atoms & ions | Atoms & ions | Ions | Atoms | Droplets |
| Uniformity for complex shaped objects | Poor, line of sight coverage except by gas scattering | Good, nonuniform, uniform thickness distributions | Good, but nonuniform thickness distribution | Good | No |
| Energy of deposited species | Low (∼0.1–0.5 eV) | Can be high (1–100 eV) | Very high | Can be high | Very high |
| Bombardment of substrate/deposit by inert gas ions | Generally no | Yes or no, depending on geometry | Yes | Possible | Yes |
| Substrate heating (by external means) | Yes, normally | Yes or no | Yes or no | Yes | Not normally |
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