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Table 1.

BN films deposition conditions.

Substrate p-type Si (1 0 0)
Working pressure (Pa) 40
Substrate temperature (°C) 700
Carrier gas flow rate (sccm) 30
Ammonia gas flow rate (sccm) 300
Bias voltage (V) 100
Filament temperature (°C) 1500, 1800, 2000
Filament distance (mm) 10
Deposition time (min) 30

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