Table 1.
BN films deposition conditions.
| Substrate | p-type Si (1 0 0) |
|---|---|
| Working pressure (Pa) | 40 |
| Substrate temperature (°C) | 700 |
| Carrier gas flow rate (sccm) | 30 |
| Ammonia gas flow rate (sccm) | 300 |
| Bias voltage (V) | 100 |
| Filament temperature (°C) | 1500, 1800, 2000 |
| Filament distance (mm) | 10 |
| Deposition time (min) | 30 |
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.