This article has an erratum: [https://doi.org/10.1051/mfreview/2015016]
BN films deposition conditions.
|Substrate||p-type Si (1 0 0)|
|Working pressure (Pa)||40|
|Substrate temperature (°C)||700|
|Carrier gas flow rate (sccm)||30|
|Ammonia gas flow rate (sccm)||300|
|Bias voltage (V)||100|
|Filament temperature (°C)||1500, 1800, 2000|
|Filament distance (mm)||10|
|Deposition time (min)||30|
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